Hot-carrier separation in heterostructure nanowires observed by electron-beam induced current
The separation of hot carriers in semiconductors is of interest for applications such asthermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowiresoffer several potential advantages for effective hot-carrier separation such as: a high degree ofcontrol and flexibility in heterostructure-based band engineering, increased hot-carriertemperatures compared to bulk, and a ge
