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Resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy and x-ray excited optical luminescence (XEOL) have been used to measure element specific filled and empty electronic states over the Si L-2,L-3 edge of passivated Si nanocrystals of narrow size distribution ( diameter 2.2 +/- 0.4 nm). These techniques have been employed to directly measure absorption and luminescence specifi
