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We prepared alpha- and beta surface phases of GaAs(0 0 1)-c(4 x 4) reconstruction by molecular beam epitaxy (MBE) using As-4 and As-2 molecular beams, respectively, and examined them by angle-resolved ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) with synchrotron radiation as an excitation source. The UPS valence band spectra and the XPS 3d core level data
