Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry
We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For the initial purpose of adding new inputs to the ellipsometry model, focused ion-beam tomography experiments were conducted to extract porosity/depth profiles of these systems.
