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Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. STM imaging was performed on indiu
