Low-frequency noise in ferroelectric III-V vertical gate-all-around FETs
In this letter, we demonstrate low-frequency noise (LFN) characterization of an InAs vertical gate-all-around hafnium-zirconium oxide (HZO) ferroelectric field-effect transistor (FeFET). The LFN characteristics are investigated before and after ferroelectric switching for up to 1000 cycles in the FeFET. The evolution of such cycling reveals distinct differences in the LFN for the two polarization
