Cryogenic performance of vertical III-V nanowire gate-all-around ferroelectric FETs
This work investigates the cryogenic performance of InAs-based vertical nanowire ferroelectric field-effect transistors (VNW-FeFETs) with hafnium zirconium oxide (HZO) as the ferroelectric gate dielectric. Measurements at 300 K and 14 K reveal a 25% increase in memory window, from 560 mV at room temperature to 700 mV at 14 K, indicating enhanced polarization stability at low temperatures while als
