Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
InAs nanowires have been used as selectors and electrodes in a one-transistor one-resistor resistive random-access memory (RRAM) configuration for increased memory scalability. Such oxide-based memories not only show promise both in conventional memory technology but also as analog memories for neural networks. The small areas of the oxide elements, however, result in challenges for electrical cha
