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Tunnel FETs (TFETs) have been identified as the most promising steep slope devices for ultralow power logic circuits. In this paper, we demonstrate in-plane InAs/Si TFETs monolithically integrated on Si, using our recently developed template-assisted selective epitaxy approach. These devices represent some of the most scaled TFETs with dimensions of less than 30 nm, combined with excellent aggrega
Self-adaptation provides a principled way to deal with change during operation. As more systems with strict goals require self-adaptation, the need for guarantees in self-adaptive systems is becoming a high-priority concern. Designing adaptive software using principles from control theory has been identified as one of the approaches to provide guarantees. However, current solutions can only handle
Background: The fractalkine/CX3C chemokine receptor 1 (CX3CR1) pathway has been identified to play an essential role in the chemotaxis of microglia, leukocyte trafficking and microglia/macrophage recruitment. It has also been shown to be important in the regulation of the inflammatory response in the early phase after experimental stroke. The present study was performed to investigate if CX3CR1 de
We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy
We demonstrate for the first time a technology which allows the monolithic integration of both p-Type (InAs-Si) and n-Type (InAs-GaSb) heterojunction Tunnel FETs (TFET) laterally on a Si substrate. The lateral heterojunction nanowire (NW) structures are implemented using top-down CMOS-compatible processes combined with Template-Assisted Selective Epitaxy (TASE) [1] of the III-V materials. Sub-40nm
In this presentation we will discuss our recent progress on the integration of InAs/Si p-tunnel FETs (TFETs) and InAs/GaSb n-TFETs on SOI wafers. Local III-V growth is enabled by the development of Template-Assisted Selective Epitaxy (TASE) [1-4]. Both polarity devices have scaled geometries with cross-sections on the order of 30nm. The p-channel InAs/Si TFETs are developed based on our previously
This part of the paper presents TCAD simulations of the InAs/Si lateral nanowire (NW) tunnel FET (TFET) with the same geometry as the fabricated device discussed in the first part. In addition to band-to-band tunneling, trap-assisted tunneling (TAT) at the InAs/Si and InAs/oxide interfaces was considered. A very good agreement is found between the simulation results and experimental transfer chara
We report InAs-Si nanowire (NW) Tunnel FETs fabricated inside nanotube templates. High device yield and performances are obtained by optimizing the growth conditions and the fabrication flow using inorganic material as dielectric spacer, atomic-layer-deposition for the metal gate and by scaling the equivalent oxide thickness (EOT). We extract the exponential parameter B of Kane's tunneling model f
Stem cell engineering and grafting of mesencephalic dopamine (mesDA) neurons is a promising strategy for brain repair in Parkinson's disease (PD). Refinement of differentiation protocols to optimize this approach will require deeper understanding of mesDA neuron development. Here, we studied this process using transcriptome-wide single-cell RNA sequencing of mouse neural progenitors expressing the
Near field Inverse Synthetic Aperture Radar Cross Section (RCS) measurements are used in this study to obtain geometrically correct images of objects placed on a turntable. The images of the targets are processed using a method common in the compressive sensing field, Basis Pursuit Denoise. A near field model based on isotropic point scatterers is set up. The target model is naturally sparse and t
Lead is a heavy metal which is toxic even at low exposure levels. Although the amount of lead used in industry is steadily declining, it still constitutes a common alloying element for most conventional brass varieties. Today, conventional brasses contain roughly 3 wt % lead. One of the main incentives for using lead as an alloying element is that it has a markedly positive effect on the machinabi
Stem cell treatments for neurodegenerative diseases are expected to reach clinical trials soon. Most of the approaches currently under development involve transplantation of immature progenitors that subsequently undergo phenotypic and functional maturation in vivo, and predicting the long-term graft outcome already at the progenitor stage remains a challenge. Here, we took an unbiased approach to
This paper focuses on Nanluoguxiang (NLGX), a historic neighbourhood in Beijing, where the author lived for 2,5 years. The neighbourhood is one of 25 conservation areas in the city, and since 2008 a popular tourist attraction among both domestic and foreign tourists. The area has a long history and many well preserved buildings, including two smaller muse
