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There has recently been a considerable attention to the possible role of semiconductor nanowires for future device applications. To make this development feasible, precise control over the growth mechanism is required. In the Vapor-Liquid-Solid growth, the most common growth mechanism, gas phase precursors decompose in presence of catalytic particles and after supersaturating the particles, solid
This thesis concerns growth and characterization of gold-particle seeded nanowires of III-V semiconductor materials (III-V NWs). The nanowires were grown using metal-organic vapour phase epitaxy (MOVPE) and characterized by various microscopy techniques. In particular cross-sectional scanning tunnelling microscopy (XSTM) and cathodoluminescence microscopy (CL) were employed to investigate heterost
Throughout this thesis, samples of various materials with applications in energy converting devices have been prepared by focused ion beam machining and investigated by transmission electron microscopy. Energy converting devices can be solar cells or light emitting diodes, which turn light into electricity or vice versa. They can also be fuel cells or electrolyzer cells, which turn chemical energy
Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and n
This thesis explores the possibility of using advanced device geometries and heterostructure engineering to manipulate, control, and study the electrical and optical properties of semiconductor nanowires. The first part of the thesis investigates the use of different gate-all-around architectures for creating new types of gate-controlled nanowire devices, primarily intended for fundamental studies
In this work, we present a novel self-aligned gate-last fabrication process for vertical nanowire metal-oxide-semiconductor field-effect transistors. The fabrication method allows for exposure dose-defined gate lengths and a local diameter reduction of the intrinsic channel segment, while maintaining thicker highly doped access regions. Using this process, InAs nanowire transistors combining good
Background: Many women of childbearing age are occupationally active, which leads to a large number of pregnancies potentially exposed to occupational exposures. Occupational noise has been identified as a risk factor for hearing impairment in adults. However, very few studies have assessed the effect of occupational noise on the fetus. Objectives: The aim of this study was to investigate whether
Objective To investigate the role of rheumatoid factor (RF) status and anti-citrullinated peptide antibody (ACPA) status as predictors of abatacept (ABA) effectiveness in patients with rheumatoid arthritis (RA). Methods We conducted a pooled analysis of data from 9 observational RA registries in Europe (ARTIS [Sweden], ATTRA [Czech Republic], BIOBADASER [Spain], DANBIO [Denmark], GISEA [Italy], NO
Distal radius fracture is an early indicator of osteoporosis, yet little is known about men with this fracture and osteoporosis prevalence. The purpose of this cross-sectional, controlled study was to evaluate bone mineral density (BMD) in men, from working age to the elderly, with distal radius fracture. Recruitment was as follows: men who fractured during 1999–2000 were evaluated retrospectively
