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On the Distance to Infeasibility in DC Power Grids with Constant-Power Loads
This paper is concerned with the feasibility of the power flow in DC power grids with constant power loads. We introduce the notion of distance to infeasibility as a voltage stability index and robustness measure for power flow feasibility. In particular, we study the p-norm distance to infeasibility in the domain of the constant power loads, and show how this distance may be expressed as a mathem
Protokoll Fakultetsstyrelse STYR 2024 2405 - 2024-09-25
Årsutställningen 2024
Lunds universitet Sam Fak yttrande V 2024-1933 SOU 2024 54 Vägar Till Ett Tryggare Samhälle
Sam Fak yttrande SOU 2024 26 förändringar I Sjukförsäkringens Regelverk V2024 860.docx
SamFak yttrande Ds2024-30 insatser Inom Socialtjänsten När Samtycke Saknas V 2024-2564
Tentaschema HT 2024 September - Januari 2025 Extern Hemsida 2024-08-05
Tentaschema HT 2024 September - Januari 2025 Extern Hemsida 2024-09-12
Tentaschema HT 2024 September - Januari 2025 Extern Hemsida 2024-11-07
Tentaschema HT 2024 September - Januari 2025 Extern Hemsida 2024-11-27
2024-11-05 TCR-Onco Friday Seminar Series 2024-2025
Hilbert Metric for Nonlinear Consensus with Varying Topology
New results on continuous time nonlinear consensus under varying topology are presented. The results are proved utilizing non Lyapunov based methods, i.e., the Hilbert metric, showing the possibility of further investigation of Hilbert metric for consensus and synchronization problems.
On the H2 optimal control of uniformly damped mass-spring networks
In this paper we provide an analytical solution to an H2 optimal control problem, that applies whenever the process corresponds to a uniformly damped network of masses and springs. The solution covers both stable and unstable systems, and illustrates analytically how damping affects the levels of achievable performance. Furthermore, the resulting optimal controllers can be synthesised using passiv
Jaw complex : openness, prominence, and dynamics
III-V MOSFETs for RF Applications
Integration of high-quality oxides on III-V materials allows for versatile design of electronic devices, suitable for RF and power applications. We here present an overview of our results of planar and non-planar III-V MOSFETs for RF electronics, highlighting possibilities and challenges.
Marie Skłodowska-Curie Actions – indicative calendar for 2024 – Forskningsservice
June 2024 – The Alumni Network Blog
https://alumni.blogg.lu.se/2024/06/ - 2026-05-28
August 2024 – The Alumni Network Blog
https://alumni.blogg.lu.se/2024/08/ - 2026-05-28
May 2024 – The Alumni Network Blog
https://alumni.blogg.lu.se/2024/05/ - 2026-05-28
